4 edition of Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers found in the catalog.
Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers
A. L. Rasmussen
by U.S. Dept. of Commerce, National Institute of Standards and Technology, Order from National Technical Information Service in [Washington, D.C.], [Springfield, VA
Written in English
|Other titles||Improved low level silicon avalanche photodiode transfer standards at 1.064 micrometers|
|Statement||A.L. Rasmussen, P.A. Simpson, A.A. Sanders|
|Series||NISTIR -- 89-3917, NISTIR -- 3917|
|Contributions||Simpson, Philip A, Sanders, A. A, National Institute of Standards and Technology (U.S.)|
|The Physical Object|
|Pagination||iii, 36 p. :|
|Number of Pages||36|
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Get this from a library. Improved low-level silicon-avalanche-photodiode transfer standards at micrometers. [A L Rasmussen; Philip A Simpson; A A Sanders; National Institute of Standards and Technology (U.S.)].
Get this from a library. Improved low-level silicon-avalanche-photodiode transfer standards at micrometers. [A L Rasmussen; P A Simpson; A A Sanders; National Institute of Standards and Technology (U.S.)].
Buy Improved low-level silicon-avalanche-photodiode transfer standards at micrometers (SuDoc C ) by A. Rasmussen (ISBN:) from Amazon's Book Store. Everyday low prices and free delivery on eligible : A.
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We need you to answer this question. If you know the answer to this question, please register to join our limited beta program and start. For the first time traceable transfer standards have been developed for measuring mu.m laser pulses with duration of about 10 to ns, peak power density of about 10â»â ¸ to 10â.
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